s High Speed: tPD = 5.4 ns (typ) at VCC = 5V s Low Power Dissipation: ICC = 4 µA (max) at TA = 25°C s Power down protection is provided on all inputs and outputs s Pin an.
The VHCT540A is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The VHCT540A is an octa.
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